This PhD studentship aims at developing the next generation of resistive random-access memories (RRAM) based on 2D materials fabricated with flexible substrates. Flexible devices incorporating mono- or multilayers of materials such as graphene, graphene oxide, MoS2 or hBN can offer a competitive advantage for realising RRAM devices with nanosecond switching and low power consumption and also alleviate existing issues related to increased line resistance that are detrimental to the performance of state-of-the-art devices. Additionally, given their unique ion transport characteristics, they can provide new avenues for modulating and optimising the switching behaviour of existing RRAM topologies that have been developed in CEF.
We welcome applications from candidates with a background in electronics, physics and material science. Specific areas of interest would include nanofabrication, nanoelectronics devices, thin films and semiconductors. Interested candidates are encouraged to contact Dr Spyros Stathopoulos (email@example.com).